Surface Polarity and Shape-Controlled Synthesis of ZnO Nanostructures on GaN Thin Films Based on Catalyst-Free Metalorganic Vapor Phase Epitaxy
نویسندگان
چکیده
With the rapid developments in nanotechnology, there has been tremendous interest in ZnO-related nanomaterials because ZnO is a wide band-gap semiconductor and a piezoelectric oxide. As a result, it is useful for optoelectronics, transparent electronics, sensors, and transducers. ZnO crystals have a noncentral symmetric wurtzite structure and are composed of close packed O and Zn2þ layers piled alternatively along the c-axis, producing positively charged Zn-terminated (0001) polar surfaces and negatively charged O-terminated (0001) polar surfaces. Together with the polar surfaces, three fast growth directions of [0001], [0110], and [21 10] facilitate anisotropic growth of ZnO nanocrystals which have various one-dimensional (1D) structures including c-axis oriented nanowires and a-axis oriented nanobelts. For ZnO at the nanometer scale, meanwhile, the surface to volume ratio increases significantly with size reduction and thus, the effect of the surface, especially the surface polarity, plays an important role in determining the structures as well as the chemical and physical properties of the ZnO nanostructures. For example, electrostatic interactions driven by the polar surfaces leads to the deformation of ZnO nanostructures to form unique shapes such as seamless nanorings, nanobows, nanosprings, and nanohelices. In addition, ZnO nanocrystals with varying surface configurations and polarities display different optical and electronic properties. These phenomena make control of the surface is a crucial factor in designing nanomaterials for various applications.
منابع مشابه
Metalorganic vapor phase epitaxy and characterizations of nearly-lattice-matched AlInN alloys on GaN/sapphire templates and free-standing GaN substrates
The epitaxy optimization studies of high-quality n-type AlInN alloys with different indium contents grown on two types of substrates by metalorganic vapor phase epitaxy (MOVPE) were carried out. The effect of growth pressure and V/III molar ratio on growth rate, indium content, and surface morphology of these MOVPE-grown AlInN thin films were examined. The surface morphologies of the samples we...
متن کاملCatalyst-free growth of high-optical quality GaN nanowires by metal- organic vapor phase epitaxy
Related Articles High temperature thermoelectric properties of optimized InGaN J. Appl. Phys. 110, 123709 (2011) A comparison of the growth modes of (100)and (110)-oriented CrO2 films through the calculation of surface and interface energies J. Appl. Phys. 110, 113910 (2011) A strain relief mode at interface of GaSb/GaAs grown by metalorganic chemical vapor deposition Appl. Phys. Lett. 99, 2219...
متن کاملA novel hybrid pulsed laser deposition/metalorganic vapour deposition method to form rare-earth activated GaN
A novel low-temperature method based on a combination of pulsed laser deposition and metalorganic chemical vapour deposition was used to fabricate GaN thin films doped with rare-earth (RE) ions. The films were deposited on GaN/Al2O3 substrates. The x-ray diffraction analysis of these GaN : RE (RE = Eu, Tb) samples showed that the films have the hexagonal phase of GaN and are polycrystalline wit...
متن کاملHydride Vapor Phase Epitaxial Growth of Thick GaN Layers with Improved Surface Flatness
Thick GaN layers have been grown by hydride vapor phase epitaxy (HVPE) on different GaN templates grown by metalorganic vapor phase epitaxy. Crack formation could be reduced by using a hydrogen/nitrogen carrier gas mixture. By carefully optimizing the growth conditions in the final stage of the process, excellent surface morphologies could be obtained at still acceptably high growth rates. Up t...
متن کاملSynthesis of Serrated GaN Nanowires for Hydrogen Gas Sensors Applications by Plasma-Assisted Vapor Phase Deposition Method
Nowadays, the semiconductor nanowires (NWs) typically used in hydrogen gas sensors. Gallium nitride (GaN) with a wide band gap of 3.4 eV, is one of the best semiconductors for this function. NWs surface roughness have important role in gas sensors performance. In this research, GaN NWs have been synthesized on Si substrate by plasma-assisted vapor phase deposition at different deposition time, ...
متن کاملذخیره در منابع من
با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید
عنوان ژورنال:
دوره شماره
صفحات -
تاریخ انتشار 2008